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J-GLOBAL ID：200902001903226046   Reference number：91A0942915

Pressure dependence of a deep excitonic level in silicon.

Author (2)：
NORTHROP G A

About NORTHROP G A

(IBM Thomas J. Watson Research Center, NY)

About IBM Thomas J. Watson Research Center, NY

, 
WOLFORD D J

About WOLFORD D J

(IBM Thomas J. Watson Research Center, NY)

About IBM Thomas J. Watson Research Center, NY


Material：
Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures  (Impurities Defects Diffus Semicond Bulk Layer Struct)

About Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures


Page： 27-32  Publication year： 1990 
JST Material Number： K19910585  ISBN： 1-55899-051-8  Document type： Proceedings
Country of issue： United States (USA)  Language： ENGLISH (EN)

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