Tight-binding calculation of the band offset at the Ge-GaAs (110) interface using a local charge-neutrality condition.

PRIESTER C; ALLAN G; LANNOO M

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J-GLOBAL ID：200902001911077505 Reference number：86A0437823

Tight-binding calculation of the band offset at the Ge-GaAs (110) interface using a local charge-neutrality condition.

局所的電荷中性条件を用いて強束縛計算したGe-GaAs(110)界面でのバンドオフセット

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Material：
Volume： 33 Issue： 10 Page： 7386-7388 Publication year： May. 15, 1986
JST Material Number： D0746A ISSN： 1098-0121 CODEN： PRBMDO Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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半導体-半導体接触【’81~’92】

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