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ArticleJ-GLOBAL ID:200902001925744202整理番号:91A0072847

Characterisation of negative resistance and bipolar latchup in thin film SOI transistors by two-dimensional numerical simulation.

二次元数値シミュレーションによる薄膜SOIトランジスタの負性抵抗とバイポーララッチアップの特性化

著者:ARMSTRONG G A(Queen’s Univ., Belfast, IRL)、THOMAS N J(British Telecom Research Lab., Ipswich, GBR)、DAVIS J R(British Telecom Research Lab., Ipswich, GBR)
資料名:Proc 1989 IEEE SOS SOI Technol Conf ページ:44-45
発行年:1989年
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