Art
J-GLOBAL ID：200902001927220219   Reference number：85A0003438

A study of the growth of high-purity InGaAs by conventional LPE.

通常のLPE法による高純度InGaAsの育成
Author (3)：
PENNA T C

About PENNA T C

(AT&T, New Jersey)

About AT&T, New Jersey

, 
TAMARGO M C

About TAMARGO M C

(Bell Communication Research, New Jersey)

About Bell Communication Research, New Jersey

, 
SWARTZWELDER W L

About SWARTZWELDER W L

(AT&T, New Jersey)

About AT&T, New Jersey


Material：
Journal of Crystal Growth  (J Cryst Growth)

About Journal of Crystal Growth


Volume： 67  Issue： 1  Page： 27-30  Publication year： Jun. 1984 
JST Material Number： B0942A  ISSN： 0022-0248  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)
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liquid phase growth

About liquid phase growth

,...
Semi thesaurus term：
Thesaurus term/Semi thesaurus term
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LPE

About LPE


   To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=85A0003438&from=J-GLOBAL&jstjournalNo=B0942A") }}
JST classification (1)：
JST classification
Category name(code) classified by JST.
Semiconductor thin films 
(BK14040E)

About Semiconductor thin films

Terms in the title (2)：
Terms in the title
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高純度

About 高純度

, 
InGaAs

About InGaAs


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