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ArticleJ-GLOBAL ID:200902001930664438整理番号:83A0413311

New progress in the development of a 94-GHz pretuned module silicon IMPATT diode.

94GHz同調ずみモジュールシリコンIMPATTダイオード開発における新しい進歩

著者:HEITZMANN M(Thomson‐CSF, France)、BOUDOT M(Thomson‐CSF, France)
資料名:IEEE Trans Electron Devices 巻:30 号:7 ページ:759-763
発行年:1983年07月
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