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ArticleJ-GLOBAL ID:200902001931408796整理番号:92A0229575

Secondary ion mass spectrometry depth profiling of boron, antimony, and germanium deltas in silicon and implications for profile deconvolution.

シリコン中のほう素,アンチモン,ゲルマニウムのデルタドーピングの二次イオン質量深さ分析と分布分解に対する意味

著者:DOWSETT M G(Univ. Warwick, Coventry, GBR)、COLLINS R(Univ. York, York, GBR)、BARLOW R D(Univ. Warwick, Coventry, GBR)・・・
資料名:J Vac Sci Technol B 巻:10 号:1 ページ:336-341
発行年:1992年01月
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