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ArticleJ-GLOBAL ID:200902001932717342整理番号:88A0451082

窒化燐をゲート絶縁膜とするInP MIS電界効果トランジスタ

InP metal-insulator-semiconductor field effect transistors with phosphorus nitride films as the gate insulator.

著者:岩瀬義倫(日本鉱業 電子材料・部品研)、新井夫差子(東大 工)、菅野卓雄(東大 工)
資料名:電子情報通信学会技術研究報告 巻:88 号:61 ページ:55-62(ED88-30)
発行年:1988年05月28日
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