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ArticleJ-GLOBAL ID:200902001934410023整理番号:89A0338975

On the temperature dependence of majority carrier transport in heavily arsenic-doped polycrystalline silicon thin films.

高度にひ素ドープした多結晶シリコン薄皮膜内の多数担体移動の温度依存性

著者:CRESSLER J D(IBM Thomas J. Watson Research Center, NY, USA)、HWANG W(IBM Thomas J. Watson Research Center, NY, USA)、CHEN T‐C(IBM Thomas J. Watson Research Center, NY, USA)
資料名:J Electrochem Soc 巻:136 号:3 ページ:794-804
発行年:1989年03月
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