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J-GLOBAL ID:200902001935169281   Reference number:90A0542717

High performance submicron pseudo-MODFETs and 2:1 multiplexers using GaAs on InP heteroepitaxial technology.

InP上のGaPのヘテロエピタキシャル技術を用いる高性能のサブミクロン擬MODFETと2:1マルチプレクサ
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Volume: 26  Issue: 12  Page: 807-809  Publication year: Jun. 07, 1990 
JST Material Number: A0887A  ISSN: 0013-5194  CODEN: ELLEAK  Document type: Article
Article type: 短報  Country of issue: United Kingdom (GBR)  Language: ENGLISH (EN)
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Transistors  ,  Other transmission circuit elements 
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