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ArticleJ-GLOBAL ID:200902001935169281整理番号:90A0542717

High performance submicron pseudo-MODFETs and 2:1 multiplexers using GaAs on InP heteroepitaxial technology.

InP上のGaPのヘテロエピタキシャル技術を用いる高性能のサブミクロン擬MODFETと2:1マルチプレクサ

著者:LO Y H(Bellcore, N.J., USA)、BAGHERI M(Bellcore, N.J., USA)、LIN P S D(Bellcore, N.J., USA)・・・
資料名:Electron Lett 巻:26 号:12 ページ:807-809
発行年:1990年06月07日
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About J-GLOBAL

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