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ArticleJ-GLOBAL ID:200902001939768945整理番号:87A0185177

Disordering of AlAs-GaAs superlattices by Si and S implantation at different implant temperatures.

異なる注入温度でのSiとSの注入によるAlAs‐GaAs超格子の無秩序化

著者:DOBISZ E A(Bell Communications Research, NJ, USA)、TELL B(AT&T Bell Lab., NJ, USA)、CRAIGHEAD H G(Bell Communications Research, NJ, USA)・・・
資料名:Journal of Applied Physics 巻:60 号:12 ページ:4150-4153
発行年:1986年12月15日
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