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ArticleJ-GLOBAL ID:200902001945822820整理番号:87A0514831

Secondary defects of As+ implanted silicon measured by thermal wave technique.

熱波法によるAs+を注入したシリコンの二次欠陥の測定

著者:ISHIKAWA K(Matsushita Electronics Corp., Kyoto, JPN)、YOSHIDA M(Matsushita Electronics Corp., Kyoto, JPN)、INOUE M(Matsushita Electronics Corp., Kyoto, JPN)
資料名:Jpn J Appl Phys Part 2 巻:26 号:7 ページ:L1089-L1091
発行年:1987年07月
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