Art
J-GLOBAL ID：200902001946458226   Reference number：82A0370277

Negative magnetoresistance in Anderson localization of Si MOS inversion layers.

Si MOS反転層のAnderson局在性における負の磁気抵抗
Author (2)：
KAWAGUCHI Y

About KAWAGUCHI Y

(Gakushuin Women’s Junior Coll., Tokyo)

About Gakushuin Women’s Junior Coll., Tokyo

, 
KAWAJI S

About KAWAJI S

(Gakushuin Univ., Tokyo)

About Gakushuin Univ., Tokyo


Material：
Surface Science  (Surface Science Letters)

About Surface Science


Volume： 113  Issue： 1/3  Page： 505-509  Publication year： Jan. 1982 
JST Material Number： C0129B  ISSN： 0039-6028  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)
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silicon

About silicon

,...
Semi thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
弱い局在状態

About 弱い局在状態

,...
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Solid-state plasmas 
(BM02160W)

About Solid-state plasmas

,  金属-絶縁体-半導体構造【’81~’92】 
(BM03074V)

About 金属-絶縁体-半導体構造【’81~’92】

Terms in the title (5)：
Terms in the title
Keywords automatically extracted from the title.
Si

About Si

, 
MOS

About MOS

, 
反転層

About 反転層

, 
Anderson局在

About Anderson局在

, 
負の磁気抵抗

About 負の磁気抵抗


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