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ArticleJ-GLOBAL ID:200902001946458226整理番号:82A0370277

Negative magnetoresistance in Anderson localization of Si MOS inversion layers.

Si MOS反転層のAnderson局在性における負の磁気抵抗

著者:KAWAGUCHI Y(Gakushuin Women’s Junior Coll., Tokyo)、KAWAJI S(Gakushuin Univ., Tokyo)
資料名:Surf Sci 巻:113 号:1/3 ページ:505-509
発行年:1982年01月
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