Resonant magnetoresistance measurements in short (~ 1 μm) n<sup>+</sup>nn<sup>+</sup>GaAs structures: Investigation of the electric field dependence of quasi-elastic inter-Landau level scattering processes.

GUIMARAES P S S; EAVES L; SHEARD F W; PORTAL J C; HILL G

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J-GLOBAL ID：200902001946963648 Reference number：86A0219667

Resonant magnetoresistance measurements in short (~ 1 μm) n⁺nn⁺GaAs structures: Investigation of the electric field dependence of quasi-elastic inter-Landau level scattering processes.

短い(~1μm)n⁺nn⁺GaAs構造における共鳴磁気抵抗測定準弾性Landau準位間散乱過程の電場依存性

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Volume： 134 Issue： 1/3 Page： 47-51 Publication year： Nov. 1985
JST Material Number： H0676A ISSN： 0378-4363 CODEN： PHYSA Document type： Article
Article type：原著論文 Country of issue： Netherlands (NLD) Language： ENGLISH (EN)

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半導体-半導体接触【’81~’92】

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Resonant magnetoresistance measurements in short (~ 1 μm) n+nn+GaAs structures: Investigation of the electric field dependence of quasi-elastic inter-Landau level scattering processes.

Resonant magnetoresistance measurements in short (~ 1 μm) n⁺nn⁺GaAs structures: Investigation of the electric field dependence of quasi-elastic inter-Landau level scattering processes.