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ArticleJ-GLOBAL ID:200902001947278809整理番号:88A0133398

Effects of low level doping of i-layer in a-SiC:H/a-Si:H heterojunction solar cells.

a‐SiC:H/a‐Si:Hヘテロ接合におけるi‐層の低レベルドーピングの効果

著者:KONDO M(Kanegafuchi Chemical Industries Co. Ltd., Kobe, JPN)、NISHIO H(Kanegafuchi Chemical Industries Co. Ltd., Kobe, JPN)、YAMAGISHI H(Kanegafuchi Chemical Industries Co. Ltd., Kobe, JPN)・・・
資料名:Conference Record of the IEEE Photovoltaic Specialists Conference 巻:19th ページ:604-609
発行年:1987年
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