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ArticleJ-GLOBAL ID:200902001949122962整理番号:83A0453889

XPS studies of SiO2 surface layers formed by oxygen ion implantation into silicon.

シリコン中への酸素イオンの打ち込みにより形成されたSiO2表面層のXPS研究

著者:SCHULZE D(Karl‐Marx‐Univ. Leipzig, DDR)、FINSTER J(Karl‐Marx‐Univ. Leipzig, DDR)、HENSEL E(Zentralinst. Kernforschung der Akademie der Wissenschaften der DDR)・・・
資料名:Phys Status Solidi A 巻:76 号:1 ページ:K21-K24
発行年:1983年03月
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