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ArticleJ-GLOBAL ID:200902001965484483整理番号:87A0069682

Activated carrier density profile and scattering rate measurements of implanted and annealed silicon using infrared attenuated total reflection.

イオン注入し焼なましたけい素の活性キャリア密度分布と散乱確率の赤外減衰全反射を用いた測定

著者:YOUNG J F(National Research Council, Ontario, CAN)、JENSEN H R(National Research Council, Ontario, CAN)、SIMARD‐NORMANDIN M(Northern Telecom Electronics Ltd., Ontario, CAN)
資料名:Appl Phys Lett 巻:49 号:16 ページ:1031-1033
発行年:1986年10月20日
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