J-GLOBAL ID：200902001966117360整理番号：88A0390328
Electron-hole drag in semiconductors.
半導体における電子‐正孔ドラッグ
著者：HOEPFEL R A(Univ. Innsbruck, Innsbruck, AUT)、SHAH J(AT&T Bell Lab., NJ, USA)
資料名：Solid-State Electron 巻：31 号：3/4 ページ：643-648
発行年：1988年03月
資料名：Solid-State Electron 巻：31 号：3/4 ページ：643-648
発行年：1988年03月
J-GLOBAL ID: 200902001966117360
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