Art
J-GLOBAL ID:200902001968628168   Reference number:91A0321259

Defect generation/passivation by low energy hydrogen implant for silicon solar cells.

シリコン太陽電池における低エネルギー水素インプラントによる欠陥の発生/パッシベーション
Author (3):
Material:
Volume: 21st  Issue: Vol 1  Page: 644-649  Publication year: 1990 
JST Material Number: E0756A  ISSN: 0160-8371  Document type: Proceedings
Article type: 原著論文  Country of issue: United States (USA)  Language: ENGLISH (EN)
Thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
,...
   To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=91A0321259&from=J-GLOBAL&jstjournalNo=E0756A") }}
JST classification (1):
JST classification
Category name(code) classified by JST.
Solar cell 

Return to Previous Page