Lattice defects of V<sub>3</sub>Si single crystals studied by positron annihilation.

BRAUER G; DOERING C; ANDREEFF A; DLUBEK G; BRUEMMER O; JURISCH M; BEHR G

Art

J-GLOBAL ID：200902001975944210 Reference number：82A0058227

Lattice defects of V₃Si single crystals studied by positron annihilation.

陽電子消滅により研究したV₃Si単結晶の格子欠陥

Publisher site Copy service {{ this.onShowCLink("http://jdream3.com/copy/?sid=JGLOBAL&noSystem=1&documentNoArray=82A0058227&COPY=1") }}
Access JDreamⅢ for advanced search and analysis. {{ this.onShowJLink("http://jdream3.com/lp/jglobal/index.html?docNo=82A0058227&from=J-GLOBAL&jstjournalNo=D0256B") }}

Author (7)： , , , , , ,
Material：
Volume： 25 Issue： 1 Page： 65-70 Publication year： May. 1981
JST Material Number： D0256B ISSN： 0340-3793 CODEN： APHYCC Document type： Article
Article type：原著論文 Country of issue： Germany, Federal Republic of (DEU) Language： ENGLISH (EN)

,...

To see more with JDream III (charged). {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=82A0058227&from=J-GLOBAL&jstjournalNo=D0256B") }}

Lattice defects in metals , Positron annihilation

, ,

Return to Previous Page

Lattice defects of V3Si single crystals studied by positron annihilation.

Lattice defects of V₃Si single crystals studied by positron annihilation.