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ArticleJ-GLOBAL ID:200902001976206477整理番号:92A0383395

Interface structures of S-passivated GaAs(111) with CaF2 overlayers studied by X-ray standing wave technique.

X線定常波技術によって調べたCaF2被覆層を有するS不動態化GaAs(111)の界面構造

著者:SUGIYAMA M(NTT Interdisciplinary Research Lab., Tokyo, JPN)、MAEYAMA S(NTT Interdisciplinary Research Lab., Tokyo, JPN)、OSHIMA M(NTT Interdisciplinary Research Lab., Tokyo, JPN)・・・
資料名:KEK Prog Rep 号:91-2 ページ:4
発行年:1992年
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