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ArticleJ-GLOBAL ID:200902001986689441整理番号:84A0478765

Oxygen in zone-melting-recrystallized silicon-on-insulator films: Its distribution and possible role in sub-boundary formation.

ゾーン融解再結晶化シリコン‐オン‐絶縁体膜中の酸素 分布とサブ境界形成における可能な役割

著者:FAN J C C(Massachusetts Inst. Technology)、TSAUR B‐Y(Massachusetts Inst. Technology)、CHEN C K(Massachusetts Inst. Technology)・・・
資料名:Appl Phys Lett 巻:44 号:11 ページ:1086-1088
発行年:1984年06月01日
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