Electron concentration and buffer-width dependence of Hall mobility in GaAs-Ga<sub>1-x</sub>Al<sub>x</sub>As multiple-quantum-well structures.

FISHMAN G; CALECKI D

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J-GLOBAL ID：200902001995019335 Reference number：84A0387971

Electron concentration and buffer-width dependence of Hall mobility in GaAs-Ga_1-xAl_xAs multiple-quantum-well structures.

多重量子井戸型構造GaAs-Ga_1-xAl_xAsにおけるHall移動度の電子濃度及び緩衝幅依存性

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Volume： 29 Issue： 10 Page： 5778-5787 Publication year： May. 15, 1984
JST Material Number： D0746A ISSN： 1098-0121 CODEN： PRBMDO Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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半導体-半導体接触【’81~’92】

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Electron concentration and buffer-width dependence of Hall mobility in GaAs-Ga1-xAlxAs multiple-quantum-well structures.

Electron concentration and buffer-width dependence of Hall mobility in GaAs-Ga_1-xAl_xAs multiple-quantum-well structures.