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ArticleJ-GLOBAL ID:200902001995964110整理番号:91A0056984

GaAs/CaF2の電子線露光選択成長における分離露光プロセスの検討

Separation of exposure process on selective growth of GaAs/CaF2 by electron beam exposure.

著者:筒井一生(東京工大 総合理工学研究科)、古川静二郎(東京工大 総合理工学研究科)
資料名:応用物理学会学術講演会講演予稿集 巻:51st 号:3 ページ:1157
発行年:1990年09月
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