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ArticleJ-GLOBAL ID:200902002001306884整理番号:92A0177112

Formation of interface traps in metal-oxide-semiconductor devices during isochronal annealing after irradiation at 78K.

78Kの照射後の等時間アニール中の金属‐酸化物‐半導体デバイス中の界面捕獲中心の生成

著者:SAKS N S(Naval Research Lab., Washington, D.C.)、KLEIN R B(Naval Research Lab., Washington, D.C.)、YOON S(Naval Research Lab., Washington, D.C.)・・・
資料名:J Appl Phys 巻:70 号:12 ページ:7434-7442
発行年:1991年12月15日
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