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ArticleJ-GLOBAL ID:200902002006763779整理番号:92A0126763

The Defect Characterization of Heavily Si-doped Molecular Beam Epitaxy-Grown GaAs by the Monoenergetic Positron Method.

多量にSiドープした分子ビームエピタキシャル成長GaAsの単一エネルギー陽電子法による欠陥の評価

著者:WEI L(Univ. Tsukuba, Ibaraki)、CHO Y‐K(Univ. Tsukuba, Ibaraki)、DOSHO C(Univ. Tsukuba, Ibaraki)・・・
資料名:Jpn J Appl Phys Part 1 巻:30 号:11A ページ:2863-2867
発行年:1991年11月
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