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J-GLOBAL ID：200902002006763779
Reference number：92A0126763
The Defect Characterization of Heavily Si-doped Molecular Beam Epitaxy-Grown GaAs by the Monoenergetic Positron Method.
多量にSiドープした分子ビームエピタキシャル成長GaAsの単一エネルギー陽電子法による欠陥の評価
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Author (5)：
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Material：
Volume：
30
Issue：
11A
Page：
2863-2867
Publication year：
Nov. 1991
JST Material Number：
G0520B
ISSN：
0021-4922
Document type：
Article
Article type：
原著論文
Country of issue：
Japan (JPN)
Language：
ENGLISH (EN)
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Lattice defects in semiconductors
, Positron annihilation
Terms in the title (8)：
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