Art
J-GLOBAL ID：200902002011645440   Reference number：93A0195790

Damage saturation during high-energy ion implantation of Si1-xGex.

Si1-xGexの高エネルギーイオン注入時における損傷飽和
Author (2)：
HOLLAND O W

About HOLLAND O W

(Oak Ridge National Lab., Tennessee)

About Oak Ridge National Lab., Tennessee

, 
HAYNES T E

About HAYNES T E

(Oak Ridge National Lab., Tennessee)

About Oak Ridge National Lab., Tennessee


Material：
Applied Physics Letters  (Appl Phys Lett)

About Applied Physics Letters


Volume： 61  Issue： 26  Page： 3148-3150  Publication year： Dec. 28, 1992 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
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silicon containing alloy

About silicon containing alloy

,...
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Irradiational changes semiconductors 
(BK16123E)

About Irradiational changes semiconductors

,  Semiconductor-semiconductor contacts without Gr.13-15 element compounds 
(BM03083P)

About Semiconductor-semiconductor contacts without Gr.13-15 element compounds

Terms in the title (4)：
Terms in the title
Keywords automatically extracted from the title.
高エネルギーイオン

About 高エネルギーイオン

, 
注入

About 注入

, 
損傷

About 損傷

, 
飽和

About 飽和


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