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ArticleJ-GLOBAL ID:200902002016939034整理番号:90A0254267

Enhancement of deposition rate by adding Si2F6 in low-pressure chemical vapor deposition of W using WF6 and H2.

WF6とH2を用いたWの低圧CVDにおけるSi2F6添加による堆積速度の促進

著者:NISHIKAWA S(OKI Electric Industry Co., Ltd., Tokyo, JPN)、MATSUHASHI H(OKI Electric Industry Co., Ltd., Tokyo, JPN)、OHNO S(OKI Electric Industry Co., Ltd., Tokyo, JPN)
資料名:J Appl Phys 巻:67 号:2 ページ:774-777
発行年:1990年01月15日
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