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ArticleJ-GLOBAL ID:200902002021380746整理番号:84A0022743

Subthreshold currents in CMOS transistors made on oxygenimplanted silicon.

酸素が注入されたシリコン上に形成されたCMOSトランジスタのサブスレッショルド電流

著者:FOSTER D J(Plessey Research (Caswell) Ltd., England)
資料名:Electron Lett 巻:19 号:17 ページ:684-685
発行年:1983年08月18日
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