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ArticleJ-GLOBAL ID:200902002028896659整理番号:90A0060291

Oxide field dependence of Si-SiO2 interface state generation and charge trapping during electron injection.

電子注入時におけるSi‐SiO2界面状態の形成と電荷捕獲の酸化物電場依存性

著者:HEYNS M M(Interuniversity Microelectronics Center, Leuven, BEL)、RAO D K(Interuniversity Microelectronics Center, Leuven, BEL)、DE KEERSMAECKER R F(Interuniversity Microelectronics Center, Leuven, BEL)
資料名:Appl Surf Sci 巻:39 号:1/4 ページ:327-338
発行年:1989年10月
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