Oxide field dependence of Si-SiO<sub>2</sub> interface state generation and charge trapping during electron injection.

HEYNS M M; RAO D K; DE KEERSMAECKER R F

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J-GLOBAL ID：200902002028896659 Reference number：90A0060291

Oxide field dependence of Si-SiO₂ interface state generation and charge trapping during electron injection.

電子注入時におけるSi-SiO₂界面状態の形成と電荷捕獲の酸化物電場依存性

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Volume： 39 Issue： 1/4 Page： 327-338 Publication year： Oct. 1989
JST Material Number： B0707B ISSN： 0169-4332 Document type： Article
Article type：原著論文 Country of issue： Netherlands (NLD) Language： ENGLISH (EN)

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金属-絶縁体-半導体構造【’81~’92】 , Electronic structure of surfaces

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Oxide field dependence of Si-SiO2 interface state generation and charge trapping during electron injection.

Oxide field dependence of Si-SiO₂ interface state generation and charge trapping during electron injection.