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ArticleJ-GLOBAL ID:200902002029466488整理番号:92A0650398

Conditions for the formation of a gallium-stabilized GaAs(100) surface during molecular beam epitaxy.

分子線エピタキシー中にGa安定化したGaAs(100)表面を形成するための諸条件

著者:KARPOV S YU(A.F.Ioffe Physicotechnical Inst., Academy of Sciences of the USSR, St.Petersburg)、KOVAL’CHUK YU V(A.F.Ioffe Physicotechnical Inst., Academy of Sciences of the USSR, St.Petersburg)、DE LA CRUZ G(A.F.Ioffe Physicotechnical Inst., Academy of Sciences of the USSR, St.Petersburg)・・・
資料名:Sov Tech Phys Lett 巻:17 号:12 ページ:894-895
発行年:1991年12月
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