Art
J-GLOBAL ID：200902002029871668   Reference number：92A0191542

Recognition of non-radiative recombination centres in semi-insulating GaAs.

半絶縁性GaAsにおける非放射再結合中心の確認
Author (3)：
TUEZEMEN S

About TUEZEMEN S

(UMIST, Manchester, GBR)

About UMIST, Manchester, GBR

, 
BREIVIK L

About BREIVIK L

(UMIST, Manchester, GBR)

About UMIST, Manchester, GBR

, 
BROZEL M R

About BROZEL M R

(UMIST, Manchester, GBR)

About UMIST, Manchester, GBR


Material：
Semiconductor Science and Technology  (Semicond Sci Technol)

About Semiconductor Science and Technology


Volume： 7  Issue： 1A  Page： A36-A40  Publication year： Jan. 1992 
JST Material Number： E0503B  ISSN： 0268-1242  CODEN： SSTEET  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
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gallium arsenide

About gallium arsenide

,...
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Luminescence of semiconductors 
(BM08092S)

About Luminescence of semiconductors

,  Electronic structure of impurites and defects 
(BM02100I)

About Electronic structure of impurites and defects

Terms in the title (3)：
Terms in the title
Keywords automatically extracted from the title.
半絶縁性

About 半絶縁性

, 
GaAs

About GaAs

, 
非放射再結合

About 非放射再結合


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