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ArticleJ-GLOBAL ID:200902002033037559整理番号:88A0462481

Sidewall-tapered plasma SiOx deposition on grounded electrode.

接地電極上における側壁傾斜プラズマSiOx析出

著者:WATABE Y(ANELVA Corp., Tokyo, JPN)
資料名:J Electrochem Soc 巻:135 号:6 ページ:1590-1592
発行年:1988年06月
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