Optimization of Zn dopant profiles in a pin-diode/FET by combination of depth profiling techniques: a SIMS, ECV and AES study.

BAUER J G; TREICHLER R; HILLMER T; MUELLER J; EBBINGHAUS G

Art

J-GLOBAL ID：200902002036431525 Reference number：91A0719220

Optimization of Zn dopant profiles in a pin-diode/FET by combination of depth profiling techniques: a SIMS, ECV and AES study.

深さ分布技術の組合せによるpinダイオード/FETにおけるZnドーパント分布の最適化 SIMS,ECV,AES研究

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Author (5)： , , , ,
Material：
Volume： 50 Page： 138-142 Publication year： Jun. 1991
JST Material Number： B0707B ISSN： 0169-4332 Document type： Article
Article type：原著論文 Country of issue： Netherlands (NLD) Language： ENGLISH (EN)

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Optical integrated circuits,integrated optics , Lattice defects in semiconductors

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