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ArticleJ-GLOBAL ID:200902002036431525整理番号:91A0719220

Optimization of Zn dopant profiles in a pin-diode/FET by combination of depth profiling techniques: a SIMS, ECV and AES study.

深さ分布技術の組合せによるpinダイオード/FETにおけるZnドーパント分布の最適化 SIMS,ECV,AES研究

著者:BAUER J G(Siemens AG Research Lab., Muenchen, DEU)、TREICHLER R(Siemens AG Research Lab., Muenchen, DEU)、HILLMER T(Siemens AG Research Lab., Muenchen, DEU)・・・
資料名:Appl Surf Sci 巻:50 ページ:138-142
発行年:1991年06月
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