Origin of the defects observed after laser annealing of implanted silicon.

MESLI A; MULLER J C; SALLES D; SIFFERT P

Art

J-GLOBAL ID：200902002040643014 Reference number：82A0075436

Origin of the defects observed after laser annealing of implanted silicon.

イオン注入シリコンのレーザ焼なまし後に観測される欠陥の起源

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Material：
Volume： 39 Issue： 2 Page： 159-160 Publication year： Jul. 15, 1981
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Irradiational changes semiconductors , Lattice defects in semiconductors , Electronic structure of impurites and defects

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