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ArticleJ-GLOBAL ID:200902002040833425整理番号:90A0343963

A monolithically integrated receiver front-end comprising ion-implanted lateral interdigitated InGaAs PIN and InP JFET devices.

InGaAsのイオン注入横方向組合せ型PINおよびInP接合形FETデバイスから成るモノリシック集積受信フロントエンド

著者:LEE W S(STC Technology Ltd., Essex, GBR)、KITCHING S A(STC Technology Ltd., Essex, GBR)、BLAND S W(STC Technology Ltd., Essex, GBR)
資料名:Proc SPIE 巻:1144 ページ:354-360
発行年:1989年
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