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ArticleJ-GLOBAL ID:200902002044949444整理番号:91A0936649

Optical absorption measurements of band-gap shrinkage in moderately and heavily doped silicon.

中程度と高濃度にドープしたけい素バンドギャップの減少の光吸収測定

著者:AW S E(National Univ. Singapore, Singapore)、TAN H S(National Univ. Singapore, Singapore)、ONG C K(National Univ. Singapore, Singapore)
資料名:J Phys Condens Matter 巻:3 号:42 ページ:8213-8223
発行年:1991年10月21日
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