Comprehensive analysis of Si-doped Al<sub>x</sub>Ga<sub>1-x</sub>As (x=0 to 1) Theory and experiments.

CHAND N; HENDERSON T; KLEM J; MASSELINK W T; FISCHER R; CHANG Y-C; MORKOC H

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J-GLOBAL ID：200902002045028091 Reference number：85A0082259

Comprehensive analysis of Si-doped Al_xGa_1-xAs (x=0 to 1) Theory and experiments.

SiドープAl_xGa_1-xAs(x=0~1)の包括的分析理論と実験

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Volume： 30 Issue： 8 Page： 4481-4492 Publication year： Oct. 15, 1984
JST Material Number： D0746A ISSN： 1098-0121 CODEN： PRBMDO Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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Electric conduction in crystalline semiconductors , Electronic structure of impurites and defects

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Comprehensive analysis of Si-doped AlxGa1-xAs (x=0 to 1) Theory and experiments.

Comprehensive analysis of Si-doped Al_xGa_1-xAs (x=0 to 1) Theory and experiments.