Recombination dynamics in pseudomorphic and partially relaxed In<sub>0.23</sub>Ga<sub>0.77</sub>As/GaAs quantum wells.

GRUNDMANN M; BIMBERG D; FISCHER-COLBRIE A; MILLER J N

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J-GLOBAL ID：200902002047953566 Reference number：90A0587315

Recombination dynamics in pseudomorphic and partially relaxed In_0.23Ga_0.77As/GaAs quantum wells.

仮像または部分緩和したIn_0.23Ga_0.77As/GaAs量子井戸における再結合動力学

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Volume： 41 Issue： 14 Page： 10120-10123 Publication year： May. 15, 1990
JST Material Number： D0746A ISSN： 1098-0121 CODEN： PRBMDO Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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半導体-半導体接触【’81~’92】

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Recombination dynamics in pseudomorphic and partially relaxed In0.23Ga0.77As/GaAs quantum wells.

Recombination dynamics in pseudomorphic and partially relaxed In_0.23Ga_0.77As/GaAs quantum wells.