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ArticleJ-GLOBAL ID:200902002048661658整理番号:90A0849260

A study of deep-level defects in metalorganic vapor-phase-epitaxy-grown ZnSe on GaAs by deep-level transient spectroscopy.

GaAs上の有機金属気相エピタキシャル成長ZnSeにおける深い準位欠陥の深準位過渡分光法による研究

著者:WANG Y H(Univ. Florida, Florida)、LI S S(Univ. Florida, Florida)
資料名:J Appl Phys 巻:68 号:5 ページ:2535-2537
発行年:1990年09月01日
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