Art
J-GLOBAL ID：200902002058828852   Reference number：90A0270190

The charge and trap generation in thin SiO2 layers under low energy ion bombardment.

低エネルギーイオン照射下での薄いSiO2層における電荷とトラップ生成
Author (3)：
ADAMCHUK V K

About ADAMCHUK V K

(Leningrad State Univ., Leningrad, SUN)

About Leningrad State Univ., Leningrad, SUN

, 
AFANAS'EV V V

About AFANAS'EV V V

(Leningrad State Univ., Leningrad, SUN)

About Leningrad State Univ., Leningrad, SUN

, 
AKULOV A P

About AKULOV A P

(Leningrad State Univ., Leningrad, SUN)

About Leningrad State Univ., Leningrad, SUN


Material：
Radiation Effects and Defects in Solids  (Radiation Effects and Defects in Solids: Incorporating Plasma Science and Plasma Technology)

About Radiation Effects and Defects in Solids


Volume： 112  Issue： 4  Page： 189-193  Publication year： Feb. 1990 
JST Material Number： A0224B  ISSN： 1042-0150  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
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silicon dioxide

About silicon dioxide

,...
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Irradiational changes semiconductors 
(BK16123E)

About Irradiational changes semiconductors

,  Lattice defects in semiconductors 
(BK12040Q)

About Lattice defects in semiconductors

Terms in the title (3)：
Terms in the title
Keywords automatically extracted from the title.
低エネルギーイオン

About 低エネルギーイオン

, 
電荷

About 電荷

, 
トラップ

About トラップ


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