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ArticleJ-GLOBAL ID:200902002058962265整理番号:89A0201236

Defect-related dielectric breakdown, charge trapping, and interface-state generation of gate oxides grown on zone-melting-recrystallized silicon-on-insulator films.

ゾーン融解再結晶化絶縁体上Si薄膜に成長させたゲート酸化物の欠陥関連誘電破壊,電荷捕獲,および界面状態発生

著者:LEE C‐T(Massachusetts Inst. Technology, MA, USA)、CHEN C K(Massachusetts Inst. Technology, MA, USA)
資料名:J Appl Phys 巻:65 号:2 ページ:646-650
発行年:1989年01月15日
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