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J-GLOBAL ID:200902002067939705   Reference number:90A0177718

Structural study of Ag overlayers deposited on a Si(111) substrate by impact-collision ion-scattering-spectroscopy with time-of-flight detection.

飛行時間法を用いたインパクト衝突イオン散乱分光(ICISS)によるSi(111)基板上のAg蒸着層の構造研究
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Material:
Volume: 41/42  Page: 112-117  Publication year: Nov. 1989 
JST Material Number: B0707B  ISSN: 0169-4332  Document type: Article
Article type: 原著論文  Country of issue: Netherlands (NLD)  Language: ENGLISH (EN)
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Semi thesaurus term:
Thesaurus term/Semi thesaurus term
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Surface structure of semiconductors  ,  半導体-金属接触【’81~’92】 

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