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ArticleJ-GLOBAL ID:200902002068119680整理番号:89A0138882

Electron velocity enhancement by planar-doped barrier source in GaAs vertical FET.

GaAs垂直型FETのプレーナドープ障壁ソースによる電子速度増大

著者:YAMASAKI K(Cornell Univ., NY, USA)、DANIELS‐RACE T(Cornell Univ., NY, USA)、WENDT J R(Cornell Univ., NY, USA)・・・
資料名:Electron Lett 巻:24 号:22 ページ:1383-1384
発行年:1988年10月27日
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