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ArticleJ-GLOBAL ID:200902002070924778整理番号:84A0201704

Properties of thermal oxides grown on phosphorus in situ doped polysilicon.

その場りんドープ多結晶シリコン上に成長した熱酸化膜の性質

著者:STERNHEIM M(Bell Lab., New Jersey)、KINSBRON E(Bell Lab., New Jersey)、ALSPECTOR J(Bell Lab., New Jersey)・・・
資料名:J Electrochem Soc 巻:130 号:8 ページ:1735-1740
発行年:1983年08月
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About J-GLOBAL

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