About J-GLOBAL

日本語

Font size
  • A
  • A

Articleの詳細情報

ArticleJ-GLOBAL ID:200902002077398443整理番号:91A0445707

Validity of the method of the temperature dependence of the capacitance and of the active conductance in determination of the parameters of deep centers in an overcompensated semiconductor.

過剰補償した半導体の深い中心のパラメータの決定における容量と活性コンダクタンスの温度依存性の方法の有効性

著者:BERMAN L S(A.F. Ioffe Physicotechnical Inst., Academy of Sciences of the USSR, Leningrad)、LOMASOV V N(A.F. Ioffe Physicotechnical Inst., Academy of Sciences of the USSR, Leningrad)、TKACHENKO V N(A.F. Ioffe Physicotechnical Inst., Academy of Sciences of the USSR, Leningrad)
資料名:Sov Phys Semicond 巻:24 号:10 ページ:1147-1150
発行年:1990年10月
  • J-GLOBAL home
  • Bookmark J-GLOBAL

J-GLOBAL: Linking, Expanding and Sparking

About J-GLOBAL

Linking

J-GLOBAL links information that represents the key to research and development. For example, linking articles and patents with people (authors and inventors) enables the extraction of a sequence of information.
It’s useful for making new discoveries and uncovering new information.

Expanding

The system enables searches of similar kinds of content through linkage with external sites.
It helps you to obtain knowledge from dissimilar fields and discover concepts that cross the boundaries of specialisms.

Sparking

Through repeated linkage and expansioniteration, J-GLOBAL provides unexpected hints for problem-solving and the illumination of new ideas.