Art
J-GLOBAL ID：200902002077398443
Reference number：91A0445707
Validity of the method of the temperature dependence of the capacitance and of the active conductance in determination of the parameters of deep centers in an overcompensated semiconductor.
過剰補償した半導体の深い中心のパラメータの決定における容量と活性コンダクタンスの温度依存性の方法の有効性
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Author (3)：
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Material：
Volume：
24
Issue：
10
Page：
1147-1150
Publication year：
Oct. 1990
JST Material Number：
T0093A
ISSN：
0038-5700
CODEN：
SPSEAX
Document type：
Article
Article type：
原著論文
Country of issue：
United States (USA)
Language：
ENGLISH (EN)
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Electronic structure of impurites and defects
, 半導体-半導体接触【’81~’92】
Terms in the title (5)：
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