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ArticleJ-GLOBAL ID:200902002086009921整理番号:88A0262154

High-speed enhancement mode InP MISFETs grown by chloride vapor phase epitaxy.

塩素気相エピタキシャル成長による高速エンハンスメントモードInP MISFET

著者:ANTREASYAN A(AT&T Bell Lab., NJ, USA)、GARBINSKI P A(AT&T Bell Lab., NJ, USA)、MATTERA V D JR(AT&T Bell Lab., NJ, USA)・・・
資料名:Tech Dig Int Electron Devices Meet 巻:1987 ページ:611-614
発行年:1987年
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