Strain relaxation in Si<sub>1-x</sub>Ge<sub>x</sub> layers on Si(001).

CAPANO M A; HART L; BOWEN D K; GORDON-SMITH D; THOMAS C R; GIBBINGS C J; HALLIWELL M A G; HOBBS L W

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J-GLOBAL ID：200902002092553200 Reference number：92A0268357

Strain relaxation in Si_1-xGe_x layers on Si(001).

Si(001)上のSi_1-xGe_x層における歪み緩和

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Author (8)： , , , , , , ,
Material：
Volume： 116 Issue： 3/4 Page： 260-270 Publication year： Feb. 1992
JST Material Number： B0942A ISSN： 0022-0248 Document type： Article
Article type：原著論文 Country of issue： Netherlands (NLD) Language： ENGLISH (EN)

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Semiconductor thin films , Lattice defects in semiconductors

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Strain relaxation in Si1-xGex layers on Si(001).

Strain relaxation in Si_1-xGe_x layers on Si(001).