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ArticleJ-GLOBAL ID:200902015489147466整理番号:92A0820994

Deep implantation of nitrogen into GaAs for selective three-dimensional microstructuring.

選択的三次元微細構造形成のためのGaAsへのNの深いイオン注入

著者:WUERFL J(Technische Hochschule Darmstadt, Darmstadt, DEU)、MIAO J(Technische Hochschule Darmstadt, Darmstadt, DEU)、RUECK D(Gesellschaft fuer Schwerionenforschung(GSI), Darmstadt, DEU)・・・
資料名:J Appl Phys 巻:72 号:7 ページ:2700-2704
発行年:1992年10月01日
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