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J-GLOBAL ID：200902015490560377   Reference number：92A0249454

Influence of chemistry on the energy band structure: AlAs versus GaAs.

エネルギー帯構造に及ぼす化学の影響 AlAs対GaAs
Author (2)：
BOGUSLAWSKI P

About BOGUSLAWSKI P

(Inst. Physics, Polish Academy of Sciences, Warszawa, POL)

About Inst. Physics, Polish Academy of Sciences, Warszawa, POL

, 
GORCZYCA I

About GORCZYCA I

(High Pressure Research Center, Oolish Academy of Sciences , Warszawa, POL)

About High Pressure Research Center, Oolish Academy of Sciences , Warszawa, POL


Material：
Acta Physica Polonica. A  (Acta Phys Pol A)

About Acta Physica Polonica. A


Volume： 80  Issue： 3  Page： 433-436  Publication year： Sep. 1991 
JST Material Number： A0319A  ISSN： 0587-4246  CODEN： APTLBW  Document type： Article
Article type： 原著論文  Country of issue： Poland (POL)  Language： ENGLISH (EN)
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gallium arsenide

About gallium arsenide

,...
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conduction band

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JST classification
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Electronic structure of crystalline semiconductors 
(BM02060N)

About Electronic structure of crystalline semiconductors

Terms in the title (5)：
Terms in the title
Keywords automatically extracted from the title.
エネルギー

About エネルギー

, 
帯構造

About 帯構造

, 
化学

About 化学

, 
AlAs

About AlAs

, 
GaAs

About GaAs


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