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ArticleJ-GLOBAL ID:200902015492540730整理番号:91A0658271

Correlation of interface chemistry, barrier height, and step density for Al on vicinal GaAs(100) surfaces.

GaAs(100)微斜面上のAlにおける界面化学,障壁高さ,ステップ密度間の相関性

著者:CHANG S(Xerox Webster Research Center, New York)、VITOMIROV I M(Xerox Webster Research Center, New York)、BRILLSON L J(Xerox Webster Research Center, New York)・・・
資料名:J Vac Sci Technol A 巻:9 号:3 Pt 1 ページ:902-906
発行年:1991年05月
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